KHB1D0N70G PDF and Equivalents Search

 

KHB1D0N70G Specs and Replacement

Type Designator: KHB1D0N70G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 23.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm

Package: TO92

KHB1D0N70G substitution

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KHB1D0N70G datasheet

 ..1. Size:412K  kec
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KHB1D0N70G

KHB1D0N70G SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast B C switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. N DIM MILLIMETERS A 4.70 MAX E K B ... See More ⇒

 7.1. Size:1023K  kec
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KHB1D0N70G

KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 1.0A ... See More ⇒

 7.2. Size:957K  kec
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KHB1D0N70G

KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode powe... See More ⇒

 7.3. Size:1019K  kec
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KHB1D0N70G

SEMICONDUCTOR KHB1D0N60G N-Ch Planer MOSFET TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. FEATURES VDSS= 600V, ID= 0.4A Drain-Source ON Resistance ... See More ⇒

Detailed specifications: KF9N25F, KF9N25P, KF9N50F, KF9N50P, KF3N80D, KF3N80I, KF60N06P, KHB1D0N60D, 10N60, KHB1D9N60D, KHB1D9N60I, KHB2D0N60F, KHB2D0N60F2, KHB2D0N60P, KHB3D0N70F, KHB3D0N70P, KHB3D0N90F1

Keywords - KHB1D0N70G MOSFET specs

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