KHB3D0N70F MOSFET. Datasheet pdf. Equivalent
Type Designator: KHB3D0N70F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 48.5 nS
Cossⓘ - Output Capacitance: 67.2 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO220IS
KHB3D0N70F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KHB3D0N70F Datasheet (PDF)
khb3d0n70p f.pdf
KHB3D0N70P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for switch mode powersupplies.FEATURES VDSS= 700V, ID= 3ADrain-Source ON Resistance : RDS(ON)
khb3d0n90p1 f1 f2.pdf
KHB3D0N90P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB3D0N90P1AOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_avalanche characteristics. It is mainly suitable for electronic ballast and A 9.9 + 0.2BB 15.95 M
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