KHB3D0N90F2 Specs and Replacement
Type Designator: KHB3D0N90F2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 63 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO220IS
KHB3D0N90F2 substitution
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KHB3D0N90F2 datasheet
khb3d0n90p1 f1 f2.pdf
KHB3D0N90P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB3D0N90P1 A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ avalanche characteristics. It is mainly suitable for electronic ballast and A 9.9 + 0.2 B B 15.95 M... See More ⇒
khb3d0n70p f.pdf
KHB3D0N70P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES VDSS= 700V, ID= 3A Drain-Source ON Resistance RDS(ON)... See More ⇒
Detailed specifications: KHB1D9N60D, KHB1D9N60I, KHB2D0N60F, KHB2D0N60F2, KHB2D0N60P, KHB3D0N70F, KHB3D0N70P, KHB3D0N90F1, IRF9540, KHB3D0N90P1, KHB4D0N65F, KHB4D0N65F2, KHB4D0N65P, KHB4D0N80F1, KHB4D0N80F2, KHB4D0N80P1, KHB4D5N60F
Keywords - KHB3D0N90F2 MOSFET specs
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KHB3D0N90F2 substitution
KHB3D0N90F2 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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