FDR8308P MOSFET. Datasheet pdf. Equivalent
Type Designator: FDR8308P
Marking Code: 8308P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.8 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 3.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 270 pF
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: SUPERSOT8
FDR8308P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDR8308P Datasheet (PDF)
fdr8308p.pdf
November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThe SuperSOT-8 family of P-Channel Logic Level MOSFETs-3.2 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V,have been designed to provide a low profile, small footprint RDS(ON) = 0.070 @ VGS = -2.5 V. alternative to industry standard SO-8 little foot type product.Low gate char
fdr8305n.pdf
November 1999FDR8305NDual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThese N-Channel 2.5V specified MOSFETs are produced 4.5 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 Vusing Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.028 @ VGS = 2.5 V.process that has been especially tailored to minimize theon-state resis
fdr836p.pdf
April 1999FDR836PP-Channel 2.5V Specified MOSFETGeneral Description FeaturesSuperSOTTM -8 P-Channel enhancement mode power -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 Vfield effect transistors are produced using FairchildsRDS(ON) = 0.040 W @ VGS = -2.5 Vproprietary, high cell density, DMOS technology. Thisvery high density process is especially tailored to mini- H
fdr838p.pdf
March 1999FDR838PP-Channel 2.5V Specified PowerTrenchTM MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -8 A, -20 V. RDS(ON) = 0.017 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.024 @ VGS = -2.5 Vprocess that has been especially tailored to minimize theon-state resistance and yet maintain low g
Datasheet: FDP6670AL , FDP7030BL , FDP7030L , FDP7045L , FDP8030L , FDR4410 , FDR4420A , FDR8305N , 10N60 , FDR836P , FDR838P , FDR8508P , FDR856P , FDR858P , FDS3570 , FDS3580 , FDS4410 .
