KHB4D0N65F2 MOSFET. Datasheet pdf. Equivalent
Type Designator: KHB4D0N65F2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 63.4 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO220IS
KHB4D0N65F2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KHB4D0N65F2 Datasheet (PDF)
khb4d0n65p f f2.pdf
KHB4D0N65P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB4D0N65PAOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for switch mode powerBB 15.95 MAXQ
khb4d0n80p1 f1 f2.pdf
KHB4D0N80P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB4D0N80P1AOCThis planar stripe MOSFET has better characteristics, such as fastFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for electronic ballast andBB 15.95
khb4d5n60p f f2.pdf
KHB4D5N60P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB4D5N60PAOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for switching modeBB 15.95 MAXQpow
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
