All MOSFET. KHB5D0N50F2 Datasheet

 

KHB5D0N50F2 Datasheet and Replacement


   Type Designator: KHB5D0N50F2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.24 Ohm
   Package: TO220IS
 

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KHB5D0N50F2 Datasheet (PDF)

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KHB5D0N50F2

KHB5D0N50P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB5D0N50PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 500V, ID= 5.0

Datasheet: KHB4D0N65P , KHB4D0N80F1 , KHB4D0N80F2 , KHB4D0N80P1 , KHB4D5N60F , KHB4D5N60F2 , KHB4D5N60P , KHB5D0N50F , AON7410 , KHB5D0N50P , KHB6D0N40F , KHB6D0N40F2 , KHB6D0N40P , KHB7D0N65F2 , KHB7D0N65P1 , KHB7D0N80F1 , KHB7D0N80P1 .

History: IRFR5410PBF | NCE2301F

Keywords - KHB5D0N50F2 MOSFET datasheet

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