KHB5D0N50F2 PDF and Equivalents Search

 

KHB5D0N50F2 Specs and Replacement

Type Designator: KHB5D0N50F2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.24 Ohm

Package: TO220IS

KHB5D0N50F2 substitution

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KHB5D0N50F2 datasheet

 5.1. Size:1314K  kec
 khb5d0n50p f f2.pdf pdf_icon

KHB5D0N50F2

KHB5D0N50P/F/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB5D0N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0... See More ⇒

Detailed specifications: KHB4D0N65P, KHB4D0N80F1, KHB4D0N80F2, KHB4D0N80P1, KHB4D5N60F, KHB4D5N60F2, KHB4D5N60P, KHB5D0N50F, SPP20N60C3, KHB5D0N50P, KHB6D0N40F, KHB6D0N40F2, KHB6D0N40P, KHB7D0N65F2, KHB7D0N65P1, KHB7D0N80F1, KHB7D0N80P1

Keywords - KHB5D0N50F2 MOSFET specs

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