KHB5D0N50F2 Datasheet and Replacement
Type Designator: KHB5D0N50F2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.24 Ohm
Package: TO220IS
KHB5D0N50F2 substitution
KHB5D0N50F2 Datasheet (PDF)
khb5d0n50p f f2.pdf

KHB5D0N50P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB5D0N50PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 500V, ID= 5.0
Datasheet: KHB4D0N65P , KHB4D0N80F1 , KHB4D0N80F2 , KHB4D0N80P1 , KHB4D5N60F , KHB4D5N60F2 , KHB4D5N60P , KHB5D0N50F , AON7410 , KHB5D0N50P , KHB6D0N40F , KHB6D0N40F2 , KHB6D0N40P , KHB7D0N65F2 , KHB7D0N65P1 , KHB7D0N80F1 , KHB7D0N80P1 .
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