KHB7D0N65P1 MOSFET. Datasheet pdf. Equivalent
Type Designator: KHB7D0N65P1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 113 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220AB
KHB7D0N65P1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KHB7D0N65P1 Datasheet (PDF)
khb7d0n65p1 f1 f2.pdf
KHB7D0N65P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB7D0N65P1AOThis planar stripe MOSFET has better characteristics, such as fast CFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for active power factorBB 15.95 MAX
khb7d0n80p1 f1.pdf
KHB7D0N80P1/F1SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitch mode power supplies.FEATURES VDSS=800V, ID=7ADrain-Source ON
khb7d5n60p1 f1 f2.pdf
KHB7D5N60P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB7D0N60P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorcorrection and switching mode power supplies.FEATURES VDSS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: DMN55D0UT
History: DMN55D0UT
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