KHB9D0N90N1 PDF and Equivalents Search

 

KHB9D0N90N1 Specs and Replacement

Type Designator: KHB9D0N90N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 183 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.12 Ohm

Package: TO3PN

KHB9D0N90N1 substitution

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KHB9D0N90N1 datasheet

 ..1. Size:418K  kec
 khb9d0n90n1.pdf pdf_icon

KHB9D0N90N1

KHB9D0N90N1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switchin... See More ⇒

 4.1. Size:419K  kec
 khb9d0n90na.pdf pdf_icon

KHB9D0N90N1

KHB9D0N90NA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switching... See More ⇒

 5.1. Size:1235K  kec
 khb9d0n90p1 f1.pdf pdf_icon

KHB9D0N90N1

KHB9D0N90P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N90P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 900V, I... See More ⇒

 7.1. Size:1317K  kec
 khb9d0n50p1 f1 f2.pdf pdf_icon

KHB9D0N90N1

KHB9D0N50P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V... See More ⇒

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Detailed specifications: KHB7D5N60P1, KHB8D8N25F, KHB8D8N25F2, KHB8D8N25P, KHB9D0N50F1, KHB9D0N50F2, KHB9D0N50P1, KHB9D0N90F1, 4N60, KHB9D0N90NA, KHB9D0N90P1, KHB9D5N20D, KHB9D5N20F2, KHB9D5N20P, KQ9N50P, KMB012N30QA, KMB035N40DC

Keywords - KHB9D0N90N1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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