KU2303Q MOSFET Datasheet: N-Ch, 30V, 14A. Full specification with pinout and replacement list

KU2303Q Specs and Replacement

Type Designator: KU2303Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 311 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: FLP8

KU2303Q substitution

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KU2303Q datasheet

..1. Size:804K kec
ku2303q.pdf pdf_icon

SEMICONDUCTOR KU2303Q TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for DC/DC Converter and Battery pack. T D P G L U FEATURES A VDSS=30V, ID=14A. DIM MILLIMETERS Drain to Source On Resistance... See More ⇒

8.1. Size:898K kec
ku2303k.pdf pdf_icon

SEMICONDUCTOR KU2303K TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. FEATURES VDSS=30V, ID=66A. Low Drain to Source On-state Resistance. RDS(ON)=7.4m (Max.) @ VGS=10V RDS(ON)... See More ⇒

8.2. Size:808K kec
ku2303d.pdf pdf_icon

SEMICONDUCTOR KU2303D TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for DC/DC Converter. C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 + 0.15 ... See More ⇒

9.1. Size:900K kec
ku2307k.pdf pdf_icon

SEMICONDUCTOR KU2307K TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. FEATURES VDSS=30V, ID=79A. Low Drain to Source On-state Resistance. RDS(ON)=6.0m (Max.) @ VGS=10V RDS(ON)... See More ⇒