KU2307Q MOSFET Datasheet: N-Ch, 30V, 16A. Full specification with pinout and replacement list

KU2307Q Specs and Replacement

Type Designator: KU2307Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.3 nS

Cossⓘ - Output Capacitance: 422 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: FLP8

KU2307Q substitution

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KU2307Q datasheet

..1. Size:806K kec
ku2307q.pdf pdf_icon

SEMICONDUCTOR KU2307Q TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for DC/DC Converter and Battery pack.. T D P G L U FEATURES A VDSS=30V, ID=16A. DIM MILLIMETERS Drain to Source On Resistanc... See More ⇒

8.1. Size:900K kec
ku2307k.pdf pdf_icon

SEMICONDUCTOR KU2307K TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. FEATURES VDSS=30V, ID=79A. Low Drain to Source On-state Resistance. RDS(ON)=6.0m (Max.) @ VGS=10V RDS(ON)... See More ⇒

8.2. Size:800K kec
ku2307d.pdf pdf_icon

SEMICONDUCTOR KU2307D TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for DC/DC Converter. C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 + 0.15 ... See More ⇒

9.1. Size:898K kec
ku2303k.pdf pdf_icon

SEMICONDUCTOR KU2303K TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. FEATURES VDSS=30V, ID=66A. Low Drain to Source On-state Resistance. RDS(ON)=7.4m (Max.) @ VGS=10V RDS(ON)... See More ⇒