KMA3D7P20SA MOSFET. Datasheet pdf. Equivalent
Type Designator: KMA3D7P20SA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 3.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.37 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 92 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOT23
KMA3D7P20SA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KMA3D7P20SA Datasheet (PDF)
kma3d7p20sa.pdf
SEMICONDUCTOR KMA3D7P20SATECHNICAL DATAP-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for use as a load switch.EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20VDSS=-20V, ID=-3.7AB 1.30+0.20/-0.15C 1.30 MAXDrain to Source on-state Resistance23 D 0.40+0.15/-0.05E 2.40+0.30/-0.20RDS(ON)=76m(Max.) @ VGS=-4.5V1G 1.90RDS(ON)=112m(Max.) @ VGS=-
kma3d6n20sa.pdf
SEMICONDUCTOR KMA3D6N20SATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingEtime, low on resistance, low gate charge and excellent avalancheL B LDIM MILLIMETERScharacteristics. It is mainly suitable for portable equipment._+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30
kma3d0n20sa.pdf
SEMICONDUCTOR KMA3D0N20SATECHNICAL DATAN-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingEtime, low on resistance, low gate charge and excellent avalancheL B LDIM MILLIMETERScharacteristics. It is mainly suitable for portable equipment._+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: 2SK4006-01L
History: 2SK4006-01L
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