SE2303
MOSFET. Datasheet pdf. Equivalent
Type Designator: SE2303
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 1.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 35
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19
Ohm
Package:
SOT23
SE2303
Datasheet (PDF)
..1. Size:443K willas
se2303.pdf 
FM120-MWILLASTHRUSE2303 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize
9.1. Size:429K willas
se2302.pdf
FM120-M WILLASSE2302THRU SOT-23 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimiz
9.2. Size:457K willas
se2305.pdf
FM120-M WILLASTHRUSE2305FM1200-M1.0A SURFACE MOUNT SCHOTTKYSOT-23 Plastic-Encapsulate MOSFETS BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize b
9.3. Size:460K willas
se2304.pdf
FM120-MWILLASTHRUSE2304 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toN-Channel
9.4. Size:416K willas
se2306.pdf
FM120-M WILLASTHRUSE2306 SOT-23 Plastic-Encapsulate MOSFETSFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize
9.5. Size:474K willas
se2301.pdf
FM120-M WILLASSE2301THRUSOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize
9.6. Size:136K china
cse230.pdf
CSE230 N PD TC=25 25 W 0.2 W/ ID VGS=10V,TC=25 5.5 A ID VGS=10V,TC=100 3.5 A IDM 22 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 5.8 /W BVDSS VGS=0V,ID=1.0mA 200 V VGS=10V,ID=3.5A 0.40 RDS on
9.7. Size:304K cn sino-ic
se2302.pdf
SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2302 2.4A,20V N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 20V the best combination of fast switching, low ID = 2.4A on-resistance and cost-effectiveness. RDS(ON)
9.8. Size:371K cn sino-ic
se2305.pdf
SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2305 20V P-Channel Enhancement-Mode MOSFET Revision:A General Description Features SE2305 is produced with high cell density VDS= -20V DMOS trench technology, which is especially RDS(on)= 52m @VGS= -1.8VID = -2A used to minimize on-state resistance. This RDS(on)= 40m @VGS= -2.5VID = -4.1A device part
9.9. Size:371K cn sino-ic
se2302u.pdf
SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2302U 2.4A,20V N-Channel MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 20V the best combination of fast switching, low ID = 2.4A on-resistance and cost-effectiveness. RDS(ON)
9.10. Size:437K cn sino-ic
se2300.pdf
June 2015SE2300N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =50m @V =2.5VDS(ON) GSFOM R =40m @V =4.5VDS(ON) GS Simple Drive Requirement Small Package Outline
9.11. Size:255K cn sino-ic
se2306.pdf
SHANGHAI June 2007 MICROELECTRONICS CO., LTD. SE2306 N-Channel Enhancement Mode Field Effect Transistor Revision:B Features VDS = 20V,ID = 6A RDS(ON)
9.12. Size:378K cn sino-ic
se2305a.pdf
SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2305A 20V P-Channel Enhancement-Mode MOSFET Revision:A General Description Features SE2305A is produced with high cell density VDS= -20V DMOS trench technology, which is especially RDS(on)= 68m @VGS= -1.8VID = -2A used to minimize on-state resistance. This RDS(on)= 52m @VGS= -2.5VID = -4.1A device pa
9.13. Size:497K cn sino-ic
se2301.pdf
SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2301 20V P-Channel Enhancement-Mode MOSFET Revision:B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 100m @ VGS=-4.50V @Ids=-2.8A RDS(ON) = 150m @ VGS=-2.50V @Ids=-2.0A Gener
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