SE2321 Datasheet and Replacement
Type Designator: SE2321
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
Package: SOT23
SE2321 substitution
SE2321 Datasheet (PDF)
se2321.pdf

FM120-MWILLASTHRUSE2321FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOT-23 Plastic-Encapsulate MOSFETSSOD-123 PACKAGE Pb Free ProdPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize boa
Datasheet: BSS84WT1 , SE2301 , SE2302 , SE2303 , SE2304 , SE2305 , SE2306 , SE2312 , RFP50N06 , SE3400 , SE3401 , SE3404 , SE3406 , SE3407 , SE3415 , SE4812LT1 , SE9435LT1 .
History: XP202A0003PR-G | 2SK791 | BUK9Y22-100E | IPL65R1K0C6S | UTT80N06 | IXFK21N100Q | OSG90R1K2AF
Keywords - SE2321 MOSFET datasheet
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History: XP202A0003PR-G | 2SK791 | BUK9Y22-100E | IPL65R1K0C6S | UTT80N06 | IXFK21N100Q | OSG90R1K2AF



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