All MOSFET. SE3415 Datasheet

 

SE3415 Datasheet and Replacement


   Type Designator: SE3415
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
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SE3415 Datasheet (PDF)

 ..1. Size:454K  willas
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SE3415

FM120-M WILLASTHRUSE3415SOT-23 Plastic-Encapsulate MOSFETS FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize

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History: MTP3N80 | NP180N04TUJ | SM4186T9RL | SSW65R190S2 | WMM07N65C4 | NCE30P12BS | APT10021JFLL

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