SRK7002LT1 Specs and Replacement
Type Designator: SRK7002LT1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.115 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: SOT23
SRK7002LT1 substitution
- MOSFET ⓘ Cross-Reference Search
SRK7002LT1 datasheet
srk7002lt1.pdf
FM120-M WILLAS THRU SRK7002LT1 Small Signal MOSFET BARRIER RECTIFIERS -20V- 200V Silicon N-Channel FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to o... See More ⇒
srk7002lt1g.pdf
LESHAN RADIO COMPANY, LTD. SRK7002LT1G Small Signal MOSFET S-SRK7002LT1G Silicon N-Channel 3 Features 1 1) Low on-resistance. 2 2) Fast switching speed. 3) Low-voltage drive. SOT-23 (TO-236AB) 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 3 d 7) ESD Protected 2000V 8) S- Prefix for Automotive and Other Applications Requiring Uniqu... See More ⇒
ssrk7002lt1g.pdf
LESHAN RADIO COMPANY, LTD. DUAL N-CHANNEL ENHANCEMENT SSRK7002LT1G MODE FIELD EFFECT TRANSISTOR 3 Low On-Resistance Fast Switching Speed 1 Low-voltage drive 2 Easily designed drive circuits SOT-23 Pb-Free Package is available. The suffix G means Pb-free package 3 ESD Protected 1000V Ordering Information(Pb-free) 1 Device Marking Shipping SSRK7002LT1G RS 30... See More ⇒
Detailed specifications: SE3401, SE3404, SE3406, SE3407, SE3415, SE4812LT1, SE9435LT1, SMG2305L, STP80NF70, H01N45A, H01N60I, H01N60SA, H01N60SI, H01N60SJ, H02N60E, H02N60F, H02N60I
Keywords - SRK7002LT1 MOSFET specs
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History: STM6708
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