H01N60SA Datasheet and Replacement
Type Designator: H01N60SA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 19 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: TO92
H01N60SA substitution
H01N60SA Datasheet (PDF)
h01n60s.pdf

Spec. No. : MOS200501 HI-SINCERITY Issued Date : 2005.01.01 Revised Date : 2010.11.10 MICROELECTRONICS CORP. Page No. : 1/6 H01N60S Series Pin Assignment H01N60S Series 3-Lead Plastic TO-92 N-Channel Power Field Effect Transistor Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: SourceDescription 3 1 2 This high voltage MOSFET uses an advanced termination scheme
h01n60.pdf

Spec. No. : MOS200502HI-SINCERITYIssued Date : 2005.03.01Revised Date : 2006.08.31MICROELECTRONICS CORP.Page No. : 1/5H01N60 Series Pin AssignmentH01N60 SeriesN-Channel Power Field Effect TransistorTab3-Lead Plastic TO-252Package Code: JPin 1: Gate3Pin 2 & Tab: Drain2Description 1Pin 3: SourceThis high voltage MOSFET uses an advanced termination scheme topr
Datasheet: SE3407 , SE3415 , SE4812LT1 , SE9435LT1 , SMG2305L , SRK7002LT1 , H01N45A , H01N60I , P60NF06 , H01N60SI , H01N60SJ , H02N60E , H02N60F , H02N60I , H02N60J , H02N60SE , H02N60SF .
History: FDMC6679AZ
Keywords - H01N60SA MOSFET datasheet
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History: FDMC6679AZ



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