H02N60I Specs and Replacement
Type Designator: H02N60I
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 56 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: TO251
H02N60I substitution
- MOSFET ⓘ Cross-Reference Search
H02N60I datasheet
h02n60.pdf
Spec. No. MOS200403 HI-SINCERITY Issued Date 2004.07.01 Revised Date 2005.09.28 MICROELECTRONICS CORP. Page No. 1/7 H02N60 Series Pin Assignment H02N60 Series Tab 3-Lead Plastic TO-252 Package Code J N-Channel Power Field Effect Transistor Pin 1 Gate 3 Pin 2 & Tab Drain 2 1 Pin 3 Source Tab 3-Lead Plastic TO-251 Description Package Code I Pin 1 Gate This high ... See More ⇒
h02n60s.pdf
Spec. No. MOS200504 HI-SINCERITY Issued Date 2005.05.01 Revised Date 2005.09.28 MICROELECTRONICS CORP. Page No. 1/6 H02N60S Series Pin Assignment H02N60S Series Tab 3-Lead Plastic TO-252 Package Code J N-Channel Power Field Effect Transistor Pin 1 Gate 3 Pin 2 & Tab Drain 2 1 Pin 3 Source Tab 3-Lead Plastic TO-251 Description Package Code I Pin 1 Gate This hig... See More ⇒
h02n65.pdf
Spec. No. MOS200910 HI-SINCERITY Issued Date 2009.04.07 Revised Date MICROELECTRONICS CORP. Page No. 1/6 H02N65 Series Pin Assignment H02N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power Field Effect Transistor Package Code E Pin 1 Gate Pin 2 & Tab Drain Pin 3 Source Description 3 2 This high voltage MOSFET uses an advanced termination scheme to... See More ⇒
Detailed specifications: SRK7002LT1, H01N45A, H01N60I, H01N60SA, H01N60SI, H01N60SJ, H02N60E, H02N60F, 2SK3568, H02N60J, H02N60SE, H02N60SF, H02N60SI, H02N60SJ, H02N65E, H02N65F, H03N60E
Keywords - H02N60I MOSFET specs
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