H02N60SF
MOSFET. Datasheet pdf. Equivalent
Type Designator: H02N60SF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 56
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5
Ohm
Package:
TO220FP
H02N60SF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H02N60SF
Datasheet (PDF)
7.1. Size:75K hsmc
h02n60s.pdf 
Spec. No. : MOS200504HI-SINCERITYIssued Date : 2005.05.01Revised Date : 2005.09.28MICROELECTRONICS CORP.Page No. : 1/6H02N60S Series Pin AssignmentH02N60S SeriesTab 3-Lead Plastic TO-252Package Code: JN-Channel Power Field Effect TransistorPin 1: Gate3 Pin 2 & Tab: Drain21Pin 3: SourceTab3-Lead Plastic TO-251DescriptionPackage Code: IPin 1: GateThis hig
8.1. Size:85K hsmc
h02n60.pdf
Spec. No. : MOS200403HI-SINCERITYIssued Date : 2004.07.01Revised Date : 2005.09.28MICROELECTRONICS CORP.Page No. : 1/7H02N60 Series Pin AssignmentH02N60 SeriesTab 3-Lead Plastic TO-252Package Code: JN-Channel Power Field Effect TransistorPin 1: Gate3 Pin 2 & Tab: Drain21Pin 3: SourceTab3-Lead Plastic TO-251DescriptionPackage Code: IPin 1: GateThis high
9.1. Size:164K hsmc
h02n65.pdf
Spec. No. : MOS200910 HI-SINCERITY Issued Date : 2009.04.07 Revised Date : MICROELECTRONICS CORP. Page No. : 1/6 H02N65 Series Pin Assignment H02N65 Series Tab3-Lead Plastic TO-220ABN-Channel Power Field Effect Transistor Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: SourceDescription 3 2 This high voltage MOSFET uses an advanced termination scheme to
Datasheet: WPB4002
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