H02N60SI Datasheet and Replacement. Cross Reference Search

H02N60SI Datasheet (PDF)

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Spec. No. : MOS200504HI-SINCERITYIssued Date : 2005.05.01Revised Date : 2005.09.28MICROELECTRONICS CORP.Page No. : 1/6H02N60S Series Pin AssignmentH02N60S SeriesTab 3-Lead Plastic TO-252Package Code: JN-Channel Power Field Effect TransistorPin 1: Gate3 Pin 2 & Tab: Drain21Pin 3: SourceTab3-Lead Plastic TO-251DescriptionPackage Code: IPin 1: GateThis hig

8.1. Size:85K hsmc
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Spec. No. : MOS200403HI-SINCERITYIssued Date : 2004.07.01Revised Date : 2005.09.28MICROELECTRONICS CORP.Page No. : 1/7H02N60 Series Pin AssignmentH02N60 SeriesTab 3-Lead Plastic TO-252Package Code: JN-Channel Power Field Effect TransistorPin 1: Gate3 Pin 2 & Tab: Drain21Pin 3: SourceTab3-Lead Plastic TO-251DescriptionPackage Code: IPin 1: GateThis high

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Spec. No. : MOS200910 HI-SINCERITY Issued Date : 2009.04.07 Revised Date : MICROELECTRONICS CORP. Page No. : 1/6 H02N65 Series Pin Assignment H02N65 Series Tab3-Lead Plastic TO-220ABN-Channel Power Field Effect Transistor Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: SourceDescription 3 2 This high voltage MOSFET uses an advanced termination scheme to

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .