H06N60F PDF and Equivalents Search

 

H06N60F Specs and Replacement

Type Designator: H06N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 158 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220FP

H06N60F substitution

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H06N60F datasheet

 ..1. Size:75K  1
 h06n60u h06n60e h06n60f.pdf pdf_icon

H06N60F

Spec. No. MOS200402 HI-SINCERITY Issued Date 2004.04.01 Revised Date 2005.03.10 MICROELECTRONICS CORP. Page No. 1/6 H06N60 Series Pin Assignment H06N60 Series Tab 3-Lead Plastic TO-263 N-Channel Power Field Effect Transistor Package Code U Pin 1 Gate Pin 2 & Tab Drain 3 2 Pin 3 Source 1 Description Tab This high voltage MOSFET uses an advanced termination scheme t... See More ⇒

 8.1. Size:71K  hsmc
 h06n60.pdf pdf_icon

H06N60F

Spec. No. MOS200402 HI-SINCERITY Issued Date 2004.04.01 Revised Date 2005.03.10 MICROELECTRONICS CORP. Page No. 1/6 H06N60 Series Pin Assignment H06N60 Series Tab 3-Lead Plastic TO-263 N-Channel Power Field Effect Transistor Package Code U Pin 1 Gate Pin 2 & Tab Drain 3 2 Pin 3 Source 1 Description Tab This high voltage MOSFET uses an advanced termination scheme t... See More ⇒

Detailed specifications: H04N60F, H04N65E, H04N65F, H05N50E, H05N50F, H05N60E, H05N60F, H06N60E, IRF1405, H07N60E, H07N60F, H07N65E, H07N65F, H10N60E, H10N60F, H10N65E, H10N65F

Keywords - H06N60F MOSFET specs

 H06N60F cross reference

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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