All MOSFET. H06N60F Datasheet

 

H06N60F MOSFET. Datasheet pdf. Equivalent


   Type Designator: H06N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35.5 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220FP

 H06N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H06N60F Datasheet (PDF)

 ..1. Size:75K  1
 h06n60u h06n60e h06n60f.pdf

H06N60F H06N60F

Spec. No. : MOS200402HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.03.10MICROELECTRONICS CORP.Page No. : 1/6H06N60 Series Pin AssignmentH06N60 SeriesTab 3-Lead Plastic TO-263N-Channel Power Field Effect TransistorPackage Code: UPin 1: GatePin 2 & Tab: Drain32Pin 3: Source1DescriptionTabThis high voltage MOSFET uses an advanced termination scheme t

 8.1. Size:71K  hsmc
 h06n60.pdf

H06N60F H06N60F

Spec. No. : MOS200402HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.03.10MICROELECTRONICS CORP.Page No. : 1/6H06N60 Series Pin AssignmentH06N60 SeriesTab 3-Lead Plastic TO-263N-Channel Power Field Effect TransistorPackage Code: UPin 1: GatePin 2 & Tab: Drain32Pin 3: Source1DescriptionTabThis high voltage MOSFET uses an advanced termination scheme t

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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