H07N65F Specs and Replacement
Type Designator: H07N65F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220FP
H07N65F substitution
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H07N65F datasheet
h07n65.pdf
Spec. No. MOS200801 HI-SINCERITY Issued Date 2008.07.22 Revised Date 2009.0514 MICROELECTRONICS CORP. Page No. 1/6 H07N65 Series Pin Assignment H07N65 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This high voltage MOSFET uses an advanced termination scheme... See More ⇒
wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdf
WML0 MM07N65C 07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C 07N65C2, WMP07N65C2, WM C2 650 Junction ET 0V 1.0 Super J n Power MOSFE Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25... See More ⇒
h07n60.pdf
Spec. No. MOS200604 HI-SINCERITY Issued Date 2006.02.01 Revised Date 2006.02.07 MICROELECTRONICS CORP. Page No. 1/5 H07N60 Series Pin Assignment H07N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This high voltage MOSFET uses an advanced termination schem... See More ⇒
Detailed specifications: H05N50F, H05N60E, H05N60F, H06N60E, H06N60F, H07N60E, H07N60F, H07N65E, IRF830, H10N60E, H10N60F, H10N65E, H10N65F, H12N60E, H12N60F, H12N65E, H12N65F
Keywords - H07N65F MOSFET specs
H07N65F cross reference
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H07N65F substitution
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