H10N60F
MOSFET. Datasheet pdf. Equivalent
Type Designator: H10N60F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 325
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package:
TO220FP
H10N60F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H10N60F
Datasheet (PDF)
..1. Size:405K cn haohai electr
h10n60p h10n60f.pdf 
10N60 SeriesN-Channel MOSFET9.5A, 600V, N H FQP10N60C H10N60P P: TO-220PHAOHAI 50Pcs 1000Pcs 5000Pcs10N60FQPF10N60C H10N60F F: TO-220F10N60 Series Pin AssignmentFeaturesID=9.5AOriginative New De
8.1. Size:273K samsung
sgh10n60rufd.pdf
CO-PAK IGBT SGH10N60RUFDFEATURESTO-3P* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 42nS (Typ)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATINGS
8.2. Size:923K samsung
ssh10n60a.pdf
Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
8.3. Size:610K ixys
ixsh10n60b2d1 ixsq10n60b2d1.pdf
High Speed IGBT IXSH 10N60B2D1VCES = 600 VIXSQ 10N60B2D1with Diode IC25 = 20 AShort Circuit SOA Capability VCE(sat) = 2.5 VPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VG(TAB)CEIC25 TC = 25C20 AIC110 TC = 110
8.5. Size:56K ixys
ixgp10n60-a ixga10n60-a ixgh10n60-a.pdf
Preliminary dataVCES IC25 VCE(sat)Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 VHigh speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 VTO-220AB(IXGP)Symbol Test Conditions Maximum RatingsGCEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VTO-263 AA (IXGA)VGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C20 A C (TAB)E
8.6. Size:42K ixys
ixgh10n60.pdf
Preliminary dataVCES IC25 VCE(sat)Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 VHigh speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 VTO-220AB(IXGP)Symbol Test Conditions Maximum RatingsGCEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VTO-263 AA (IXGA)VGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C20 A C (TAB)E
8.7. Size:513K ixys
ixsh10n60b2d1.pdf
High Speed IGBT IXSH 10N60B2D1VCES = 600 VIXSQ 10N60B2D1with Diode IC25 = 20 AShort Circuit SOA Capability VCE(sat) = 2.5 VPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VG(TAB)CEIC25 TC = 25C20 AIC110 TC = 110
8.8. Size:42K ixys
ixgh10n60a.pdf
Preliminary dataVCES IC25 VCE(sat)Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 VHigh speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 VTO-220AB(IXGP)Symbol Test Conditions Maximum RatingsGCEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VTO-263 AA (IXGA)VGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C20 A C (TAB)E
8.9. Size:205K hsmc
h10n60.pdf
Spec. No. : MOS200902 HI-SINCERITY Issued Date : 2009.01.20 Revised Date : 2009.08.05 MICROELECTRONICS CORP. Page No. : 1/5 H10N60 Series H10N60 Series Tab3-Lead Plastic TO-220ABN-Channel Power MOSFET (600V,10A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Applications Pin 3: Source3 2 Switch Mode Power Supply 1 3-Lead TO-220FP) Uninterruptable Po
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