All MOSFET. FDS6575 Datasheet

 

FDS6575 Datasheet and Replacement


   Type Designator: FDS6575
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 53 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SO8
      - MOSFET Cross-Reference Search

 

FDS6575 Datasheet (PDF)

 ..1. Size:67K  fairchild semi
fds6575.pdf pdf_icon

FDS6575

September 2001 FDS6575 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P 2.5V specified MOSFET is a rugged -Channel 10 A, 20 V. R = 13 m @ V = 4.5 V DS(ON) GSgate version of Fairchild Semiconductors advanced R = 17 m @ V = 2.5 V DS(ON) GSPowerTrench process. It has been optimized for power management applications wi

 ..2. Size:1502K  cn vbsemi
fds6575.pdf pdf_icon

FDS6575

FDS6575www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical E

 8.1. Size:71K  fairchild semi
fds6572a.pdf pdf_icon

FDS6575

September 2001FDS6572A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 16 A, 20 V. RDS(ON) = 6 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 8 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate c

 8.2. Size:392K  fairchild semi
fds6574a.pdf pdf_icon

FDS6575

May 2008tmMFDS6574A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 16 A, 20 V. RDS(ON) = 6 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 7 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 9 m @ VGS = 1.8 Vswitching PWM controllers. It has been optimi

Datasheet: FDS4410 , FDS4435 , FDS4435A , FDS4953 , FDS5680 , FDS5690 , FDS6375 , FDS6570A , IRFP260 , FDS6576 , FDS6612A , FDS6614A , FDS6630A , FDS6670A , FDS6675 , FDS6680 , FDS6680A .

History: IRF250

Keywords - FDS6575 MOSFET datasheet

 FDS6575 cross reference
 FDS6575 equivalent finder
 FDS6575 lookup
 FDS6575 substitution
 FDS6575 replacement

 

 
Back to Top

 


 
.