All MOSFET. H12N60F Datasheet

 

H12N60F MOSFET. Datasheet pdf. Equivalent

Type Designator: H12N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 157 pF

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO220FP

H12N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H12N60F Datasheet (PDF)

4.1. ixgh12n60cd1.pdf Size:59K _igbt

H12N60F
H12N60F

HiPerFASTTM IGBT IXGH 12N60CD1 VCES = 600 V IC25 = 24 A LightspeedTM Series VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V C (TAB) G VGEM Transient ±30 V C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Co

4.2. ixgh12n60c.pdf Size:54K _igbt

H12N60F
H12N60F

IXGH 12N60C HiPerFASTTM IGBT VCES = 600 V LightspeedTM Series IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G IC25 TC = 25°C24 A C E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collecto

 4.3. ixgh12n60b.pdf Size:33K _igbt

H12N60F
H12N60F

HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collector,

4.4. ixgh12n60bd1.pdf Size:34K _igbt

H12N60F
H12N60F

IXGH 12N60BD1 HiPerFASTTM IGBT VDSS = 600 V ID25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collect

 4.5. h12n60.pdf Size:149K _hsmc

H12N60F
H12N60F

Spec. No. : MOS200902 HI-SINCERITY Issued Date : 2009.01.20 Revised Date : MICROELECTRONICS CORP. Page No. : 1/4 H12N60F H12N60F N-Channel Power MOSFET (600V,12A) 3-Lead TO-220FP) Plastic Package Package Code: F Applications Pin 1: Gate • Switch Mode Power Supply Pin 2: Drain Pin 3: Source • Uninterruptable Power Supply 3 2 1 • High Speed Power Switching

4.6. hfh12n60.pdf Size:608K _shantou-huashan

H12N60F
H12N60F

 Shantou Huashan Electronic Devices Co.,Ltd. HFH12N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

Datasheet: H07N60F , H07N65E , H07N65F , H10N60E , H10N60F , H10N65E , H10N65F , H12N60E , 2SK117 , H12N65E , H12N65F , H2301N , H2302N , H2305N , H2N7000 , H2N7002 , H2N7002K .

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