FDS6576 Specs and Replacement

Type Designator: FDS6576

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SO8

FDS6576 substitution

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FDS6576 datasheet

 ..1. Size:446K  fairchild semi
fds6576.pdf pdf_icon

FDS6576

December 2006 tm FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged 11 A, 20 V. RDS(ON) = 0.014 @ VGS = 4.5 V gate version of Fairchild Semiconductor's advanced RDS(ON) = 0.020 @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a ... See More ⇒

 ..2. Size:253K  onsemi
fds6576.pdf pdf_icon

FDS6576

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:71K  fairchild semi
fds6572a.pdf pdf_icon

FDS6576

September 2001 FDS6572A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16 A, 20 V. RDS(ON) = 6 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate c... See More ⇒

 8.2. Size:392K  fairchild semi
fds6574a.pdf pdf_icon

FDS6576

May 2008 tmM FDS6574A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16 A, 20 V. RDS(ON) = 6 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 7 m @ VGS = 2.5 V converters using either synchronous or conventional RDS(ON) = 9 m @ VGS = 1.8 V switching PWM controllers. It has been optimi... See More ⇒

Detailed specifications: FDS4435, FDS4435A, FDS4953, FDS5680, FDS5690, FDS6375, FDS6570A, FDS6575, 2SK3878, FDS6612A, FDS6614A, FDS6630A, FDS6670A, FDS6675, FDS6680, FDS6680A, FDS6685

Keywords - FDS6576 MOSFET specs

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