H8205 Datasheet and Replacement

Spec. No. : MOS200904 HI-SINCERITY Issued Date : 2009.02.27 Revised Date : 2010.07.02 MICROELECTRONICS CORP. Page No. : 1/4 H8205 Symbol & Pin Assignment H8205 Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Pin 1: Source 1 4 3Pin 2: Drania 1 & 2 Q2Pin 3: Source 2 5 2Pin 4: Gate 2 Description Pin 5: Drania 1 & 2 6 1Pin 6: Gate 1 Q1This N-Channel 2.5V s

CEH8205N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 5.2A , RDS(ON) TYP = 25 m @VGS = 4.5V. RDS(ON) TYP = 30m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.Lead free product is acquired.D2(5)D1(2)TSOP-6 package.Halogen free.456G1(6) G2(4)321 S1(1) S2(3)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

Spec. No. : MOS200905 HI-SINCERITY Issued Date : 2009.02.27 Revised Date : 2010.06.30 MICROELECTRONICS CORP. Page No. : 1/4 H8205A 8-Lead Plastic TSSOP-8LDual N-Channel Enhancement-Mode MOSFET (20V, 6A) Package Code: TS H8205A Symbol & Pin Assignment Description 8 7 6 5 Pin 1: Drain Pin 2 / 3: Source 1 Q2This N-Channel 2.5V specified MOSFET is a rugged gate version

H8205AN-Channel MOSFET6A, 19.5V, H 8205A H8205A TSSOP-8 HAOHAI H8205A-TS 3000Pcs 30000Pcs: NCE8205AUT8205AFS8205ACEG8205AS8205AGM8205AKI8205ATA8205ASTN8205AH8205A