IRF722FI Datasheet and Replacement
Type Designator: IRF722FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: ISOWATT220
IRF722FI substitution
IRF722FI Datasheet (PDF)
irf7220gpbf.pdf
PD -96258IRF7220GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G Dl Halogen-FreeRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve the extremely low on-resi
irf7220pbf.pdf
PD - 95172IRF7220PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic
irf7220.pdf
PD- 91850CIRF7220HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -14V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefi
Datasheet: IRF541FI , IRF542FI , IRF543FI , IRF621FI , IRF622FI , IFR623 , IRF623FI , IRF721FI , 5N65 , IRF723FI , IRF731FI , IRF732FI , IRF733FI , IRF741FI , IRF742FI , IRF743FI , IRF821FI .
Keywords - IRF722FI MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SWF15N65D | SI2306A
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