MTP15N06LFI MOSFET Datasheet: N-Ch, 60V, 10A. Full specification with pinout and replacement list

MTP15N06LFI Specs and Replacement

Type Designator: MTP15N06LFI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 260 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: ISOWATT220

MTP15N06LFI substitution

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MTP15N06LFI datasheet

6.1. Size:216K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP15N06VL/D Designer's Data Sheet MTP15N06VL TMOS V Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 15 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more tha... See More ⇒

6.2. Size:163K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP15N06V Designer's Data Sheet MTP15N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 15 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new... See More ⇒

6.3. Size:55K njs
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