MTP15N06LFI MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP15N06LFI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 260 nS
Cossⓘ - Output Capacitance: 450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: ISOWATT220
MTP15N06LFI Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP15N06LFI Datasheet (PDF)
mtp15n06vl.pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP15N06VL/DDesigner's Data SheetMTP15N06VLTMOS VPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-15 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more tha
mtp15n06v.pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP15N06VDesigner's Data SheetMTP15N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-15 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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