All MOSFET. MTP15N06LFI Datasheet

 

MTP15N06LFI Datasheet and Replacement


   Type Designator: MTP15N06LFI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 260 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: ISOWATT220
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MTP15N06LFI Datasheet (PDF)

 6.1. Size:216K  motorola
 mtp15n06vl.pdf pdf_icon

MTP15N06LFI

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP15N06VL/DDesigner's Data SheetMTP15N06VLTMOS VPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-15 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more tha

 6.2. Size:163K  motorola
 mtp15n06v.pdf pdf_icon

MTP15N06LFI

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP15N06VDesigner's Data SheetMTP15N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-15 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew

 6.3. Size:55K  njs
 mtp15n05 mtp15n06.pdf pdf_icon

MTP15N06LFI

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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