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SGSP363 Specs and Replacement

Type Designator: SGSP363

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO220

SGSP363 substitution

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SGSP363 datasheet

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Detailed specifications: SGSP321, SGSP322, SGSP330, SGSP341, SGSP351, SGSP358, SGSP361, SGSP362, AO4468, SGSP364, SGSP367, SGSP369, SGSP381, SGSP382, SGSP461, SGSP462, SGSP471

Keywords - SGSP363 MOSFET specs

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