FDS6890A Specs and Replacement

Type Designator: FDS6890A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: SO8

FDS6890A substitution

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FDS6890A datasheet

 ..1. Size:109K  fairchild semi
fds6890a.pdf pdf_icon

FDS6890A

November 1999 FDS6890A Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are 7.5 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5 V produced using Fairchild Semiconductor's advanced RDS(ON) = 0.022 @ VGS = 2.5 V. PowerTrench process that has been especially tailored to minimize the on-state resistance and yet mainta... See More ⇒

 ..2. Size:1462K  cn vbsemi
fds6890a.pdf pdf_icon

FDS6890A

FDS6890A www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2... See More ⇒

 8.1. Size:82K  fairchild semi
fds6894a.pdf pdf_icon

FDS6890A

October 2001 FDS6894A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 8 A, 20 V. RDS(ON) = 17 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 20 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 30 m @ VGS = 1.8 V to minimize ... See More ⇒

 8.2. Size:80K  fairchild semi
fds6892a.pdf pdf_icon

FDS6890A

October 2001 FDS6892A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 20 V. RDS(ON) = 18 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 24 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (12 nC) to minimize th... See More ⇒

Detailed specifications: FDS6630A, FDS6670A, FDS6675, FDS6680, FDS6680A, FDS6685, FDS6690A, FDS6875, SKD502T, FDS6912, FDS6912A, FDS6930A, FDS6961A, FDS6975, FDS6982, FDS6990A, FDS8433A

Keywords - FDS6890A MOSFET specs

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