SGSP477 Specs and Replacement
Type Designator: SGSP477
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 550 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO218
SGSP477 substitution
- MOSFET ⓘ Cross-Reference Search
SGSP477 datasheet
Detailed specifications: SGSP381, SGSP382, SGSP461, SGSP462, SGSP471, SGSP472, SGSP474, SGSP475, IRF640, SGSP479, SGSP481, SGSP482, SGSP491, SGSP492, SGSP574, SGSP575, SGSP577
Keywords - SGSP477 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK2359-Z | IRF7313
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