All MOSFET. 2SJ116 Datasheet

 

2SJ116 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ116

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 330 pF

Maximum Drain-Source On-State Resistance (Rds): 1.75 Ohm

Package: TO3

2SJ116 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ116 Datasheet (PDF)

1.1. 2sj116.pdf Size:208K _hitachi

2SJ116
2SJ116

5.1. 2sj113.pdf Size:43K _hitachi

2SJ116

5.2. 2sj117.pdf Size:20K _hitachi

2SJ116
2SJ116

2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain G (Flange) 3. Source S 2SJ117 Absolute

 5.3. 2sj115.pdf Size:53K _no

2SJ116

5.4. 2sj118.pdf Size:140K _no

2SJ116
2SJ116

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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MOSFET: NVJD4152P | NVGS5120P | NVGS4141N | NVGS4111P | NVGS3443 | NVGS3441 | NVGS3136P | NVGS3130N | NVF6P02 | NVF5P03 | NVF3055L108 | NVF3055-100 | NVF2955 | NVF2201N | NVE4153N |

 

 

 
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