All MOSFET. 2SJ116 Datasheet


2SJ116 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ116

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 330 pF

Maximum Drain-Source On-State Resistance (Rds): 1.75 Ohm

Package: TO3

2SJ116 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2SJ116 Datasheet (PDF)

1.1. 2sj116.pdf Size:208K _hitachi


5.1. 2sj117.pdf Size:20K _hitachi


2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain G (Flange) 3. Source S 2SJ117 Absolute

5.2. 2sj113.pdf Size:43K _hitachi


 5.3. 2sj115.pdf Size:53K _no


5.4. 2sj118.pdf Size:140K _no


Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


Back to Top