All MOSFET. 2SJ361 Datasheet

 

2SJ361 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ361

SMD Transistor Code: RY

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 1650 nS

Drain-Source Capacitance (Cd): 130 pF

Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm

Package: UPAK

2SJ361 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ361 Datasheet (PDF)

1.1. 2sj361.pdf Size:43K _hitachi

2SJ361
2SJ361

2SJ361 Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S 2SJ361 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate t

5.1. 2sj360.pdf Size:204K _toshiba

2SJ361
2SJ361

2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ360 High Speed, High current Switching Applications Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.55 ? (typ.) High forward transfer admittance : |Yfs| = 0.9 S (typ.) Low leakage current : IDSS = -1

5.2. 2sj362.pdf Size:91K _sanyo

2SJ361
2SJ361

Ordering number:EN4918 P-Channel Silicon MOSFET 2SJ362 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ362] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ362] 6.5 2.3 5.0 0.5 4 0.

 5.3. 2sj364.pdf Size:28K _panasonic

2SJ361
2SJ361

Silicon Junction FETs (Small Signal) 2SJ364 2SJ364 Silicon P-Channel Junction Unit : mm For analog switch 2.1 0.1 0.425 1.25 0.1 0.425 Features Low ON-resistance 1 Low-noise characteristics 3 2 Absolute Maximum Ratings (Ta = 25?C) 0.2 0.1 Parameter Symbol Rating Unit Gate-Drain voltage VGDS 65 V 1 : Source Drain current ID 20 mA 2 : Drain EIAJ : SC-70 Gate current IG

5.4. 2sj363.pdf Size:37K _hitachi

2SJ361
2SJ361

2SJ363 Silicon P-Channel MOS FET Application Low frequency power switching Features Low on-resistance Low drive current 4 V gate drive device can be driven from 5 V source Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S 2SJ363 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS

 5.5. 2sj365.pdf Size:644K _shindengen

2SJ361

5.6. 2sj368.pdf Size:667K _shindengen

2SJ361

5.7. 2sj360.pdf Size:1562K _kexin

2SJ361
2SJ361

SMD Type MOSFET P-Channel MOSFET 2SJ360 1.70 0.1 ■ Features ● VDS (V) =-60V ● ID =-1 A ● RDS(ON) < 0.73Ω (VGS =-10V) 0.42 0.1 0.46 0.1 ● RDS(ON) < 1.2Ω (VGS =-4V) ● High forward transfer admittance 1.Gate D 2.Drain 3.Source G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Drain-Gate voltage

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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