2SJ48 Datasheet and Replacement
Type Designator: 2SJ48
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO3
2SJ48 substitution
2SJ48 Datasheet (PDF)
2sj48 2sj49 2sj50.pdf

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2sj483.pdf

2SJ483Silicon P Channel MOS FETHigh Speed Power SwitchingADE-208-5191st. EditionFeatures Low on-resistanceRDS(on) = 0.08 typ (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitanceID = 5 AOutlineTO-92MOD.DG1. Source322. Drain13. GateS2SJ483Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDra
2sj485.pdf

Ordering number:ENN6434P-Channel Silicon MOSFET2SJ485Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ485]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ485]6.5 2.35.0 0.540.5
rej03g0868 2sj484ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 2SJ362 , 2SJ363 , 2SJ364 , 2SJ365 , 2SJ368 , 2SJ387 , 2SJ399 , 2SJ451 , 10N65 , 2SJ49 , 2SJ50 , 2SJ574 , 2SJ576 , 2SJ590LS , 2SJ601 , 2SJ601Z , 2SJ74 .
History: SIHF720S | AFN04N60T220FT | AM4394N | DMN5L06DMKQ | GSM9435WS | SM2691PSC | IXFH9N80Q
Keywords - 2SJ48 MOSFET datasheet
2SJ48 cross reference
2SJ48 equivalent finder
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History: SIHF720S | AFN04N60T220FT | AM4394N | DMN5L06DMKQ | GSM9435WS | SM2691PSC | IXFH9N80Q



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