FDS8926A Datasheet and Replacement

February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesSO-8 N-Channel enhancement mode power field effect5.5 A, 30 V. RDS(ON) = 0.030 @ VGS = 4.5 Vtransistors are produced using Fairchild's proprietary, highRDS(ON) = 0.038 @ VGS = 2.5 V.cell density, DMOS technology. This very high densityprocess is especially tailore

July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese dual N- and P -Channel enhancement mode powerN-Channel 5.5 A,30 V, RDS(ON)=0.030 @ VGS=4.5 Vfield effect transistors are produced using Fairchild'sRDS(ON)=0.038 @ VGS=2.5 V.proprietary, high cell density, DMOS technology. This veryP-Channel -4 A,-20 V, RDS(

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

April 2008tmFDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.

May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description FeaturesSO-8 P-Channel enhancement mode power field effect-4 A , -20 V, RDS(ON) = 0.055 @ VGS = -4.5 V,transistors are produced using Fairchild's proprietary, highRDS(ON) = 0.072 @ VGS = -2.5 V. cell density, DMOS technology. This very high densityprocess is especially tailor

February 2010tmFDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize RDS(on

February 2010FDS8949_F085tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state

May 2007FDS8984tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for

November 2010FDS8935Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 mFeatures General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and ruggedn

November 2013FDS8958BDual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 mFeatures General DescriptionThese dual N- and P-Channel enhancement mode power field Q1: N-Channeleffect transistors are produced using Fairchild Semiconductor's Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 Aadvanced PowerTrench process th at

November 2005 FDS8960C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channelpower field effect transistors are produced using Fairchild Semiconductors advanced PowerTrench 7.0A, 35V RDS(on) = 0.024 @ VGS = 10V process that has been especially tailored to minimize RDS(on) = 0.032 @ VGS = 4.

June 2011FDS89161LZDual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 160 m at VGS = 4.5 V, ID = 2.1 A that has been special tailored to minimize the on-state High

October 2006FDS8949tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

January 2011FDS8978N-Channel PowerTrench MOSFET 30V, 7.5A, 18mFeatures General Description rDS(on) = 18m, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 21m, VGS = 4.5V, ID = 6.9Aeither synchronous or conventional switching PWM controllers. It has been optimized for low

Fabruary 2010FDS8984_F085tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been opti

June 2006FDS8962CDual N & P-Channel PowerTrench MOSFETFeatures General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field 7.0A, 30V RDS(on) = 0.030 @ VGS = 10V effect transistors are produced using Fairchild SemiconductorsRDS(on) = 0.044 @ VGS = 4.5V advanced PowerTrench process that has been especiallytailored to minimize on-state re

June 2011FDS89161Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance

December 2010FDS89141Dual N-Channel PowerTrench MOSFET 100 V, 3.5 A, 62 mFeatures General Description Max rDS(on) = 62 m at VGS = 10 V, ID = 3.5 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 2.8 A been optimized for rDS(on), switching performance and High performan

FDS8984-F085N-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate c

FDS8949-F085Dual N-Channel Logic Level PowerTrench MOSFET40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing ON Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5VPowerTrench process that has been especially tailored Low gate charge to minimize the on-state resistance and yet mainta

FDS8958A-F085 Dual N & P-Channel PowerTrench MOSFET Features General Description Q1: N-ChannelThese dual N- and P-Channel enhancement 7.0A, 30V RDS(on) = 0.028 @ VGS = 10Vmode power field effect transistors are produced RDS(on) = 0.040 @ VGS = 4.5V using ON Semiconductors advanced PowerTrench process that has been especially Q2: P-Channeltailored to m

May 2007FDS8984tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for

FDS8935Dual P-Channel PowerTrench MOSFET-80 V, -2.1 A, 183 m General Description This P-channel MOSFET is produced using ON FeaturesSemiconductors advanced PowerTrench process that has Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 Abeen optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A High performanc

FDS8958BDual N & P-Channel PowerTrench MOSFETQ1-N-Channel: 30 V, 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 mGeneral DescriptionFeaturesThese dual N- and P-Channel enhancement mode power field Q1: N-Channeleffect transistors are produced using ON Semiconductor's advanced PowerTrench process th at has been especially Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2006FDS8949tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFETN-Channel Enhancement MOSFET FDS89161 (KDS89161)SOP-8 Features VDS (V) = 100V ID = 2.7 A RDS(ON) 105m (VGS = 10V)1.50 0.15 RDS(ON) 160m (VGS = 4.5V) High performance trench technology for extremely low rDS(on) CDM ESD Protection Level > 2KV typicalG2D25 4D2 S2Q26 3D1 G17 2Q1D1 8 1S1atings Ta = 25

FDS8960Cwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

FDS8984-NLwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

FDS8949www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel