All MOSFET. 2SK1405 Datasheet

 

2SK1405 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1405

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 120 nS

Drain-Source Capacitance (Cd): 780 pF

Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm

Package: TO3PFM

2SK1405 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1405 Datasheet (PDF)

1.1. 2sk1405.pdf Size:93K _renesas

2SK1405
2SK1405

2SK1405 Silicon N Channel MOS FET REJ03G0945-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast diode (trr = 140 ns) • Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D 1. Gate G 2

4.1. 2sk1403-a.pdf Size:40K _update

2SK1405
2SK1405

2SK1403, 2SK1403A Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1403, 2SK1403A Absolute Maximum Ratings (Ta = 25°C) Item Symb

4.2. rej03g0944 2sk1404ds.pdf Size:95K _renesas

2SK1405
2SK1405

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. 2sk1404.pdf Size:81K _renesas

2SK1405
2SK1405

2SK1404 Silicon N Channel MOS FET REJ03G0944-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1

4.4. 2sk1402.pdf Size:82K _renesas

2SK1405
2SK1405

2SK1402, 2SK1402A Silicon N Channel MOS FET REJ03G0942-0200 (Previous: ADE-208-1282) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D

 4.5. 2sk1400.pdf Size:83K _renesas

2SK1405
2SK1405

2SK1400, 2SK1400A Silicon N Channel MOS FET REJ03G0940-0200 (Previous: ADE-208-1280) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D

4.6. rej03g0943 2sk1403ads.pdf Size:98K _renesas

2SK1405
2SK1405

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. 2sk1406.pdf Size:33K _panasonic

2SK1405
2SK1405

Power F-MOS FETs 2SK1406 2SK1406 Silicon N-Channel Power F-MOS Unit : mm Features Low ON-resistance RDS(on) : RDS(on)= 0.32?(typ) 15.0± 0.3 5.0± 0.2 High-speed switching : tf =140ns(typ) 11.0± 0.2 3.2 No secondary breakdown o3.2± 0.1 High breakdown voltage, large allowable power dissipation Applications 2.0± 0.2 2.0± 0.1 Non-contact relay Solenoid drive 1.1± 0.1 0.6± 0.2 Motor

4.8. 2sk1409.pdf Size:61K _inchange_semiconductor

2SK1405
2SK1405

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1409 DESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RA

4.9. 2sk1408.pdf Size:61K _inchange_semiconductor

2SK1405
2SK1405

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1408 DESCRIPTION ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RA

Datasheet: 2SK134 , 2SK135 , 2SK1336 , 2SK1337 , 2SK1400 , 2SK1400A , 2SK1402 , 2SK1402A , IRF740 , 2SK1420 , 2SK1470 , 2SK1507-01MR , 2SK1519 , 2SK1520 , 2SK1521 , 2SK1526 , 2SK1531 .

Back to Top

 


2SK1405
  2SK1405
  2SK1405
 

social 

LIST

Last Update

MOSFET: RUS100N02 | RUR040N02TL | RUR040N02FRA | RUR020N02TL | RUQ050N02TR | RUQ050N02FRA | RUM003N02T2L | RUM002N05T2L | RUM002N02T2L | RUM001L02 | RUL035N02TR | RUF025N02TL | RUF015N02TL | RUE003N02TL | RUE002N02TL |

 

 

Back to Top