2SK1531 Specs and Replacement
Type Designator: 2SK1531
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: SC65
2SK1531 substitution
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2SK1531 datasheet
2sk1531.pdf
isc N-Channel MOSFET Transistor 2SK1531 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr... See More ⇒
2sk1530.pdf
2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit mm High-Power Amplifier Application High breakdown voltage VDSS = 200 V High forward transfer admittance Yfs = 5.0 S (typ.) Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS 20 V... See More ⇒
Detailed specifications: 2SK1405, 2SK1420, 2SK1470, 2SK1507-01MR, 2SK1519, 2SK1520, 2SK1521, 2SK1526, IRF640, 2SK1540L, 2SK1540S, 2SK1566, 2SK1567, 2SK1579, 2SK161, 2SK1611, 2SK1618L
Keywords - 2SK1531 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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