2SK161
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK161
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 18
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 0.01
A
Tjⓘ - Maximum Junction Temperature: 125
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 110
Ohm
Package: 2-4E1D
2SK161
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK161
Datasheet (PDF)
..1. Size:366K toshiba
2sk161.pdf 
2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK161 FM Tuner Applications Unit: mm VHF Band Amplifier Applications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance: |Y | = 9 mS (typ.) fs Extremely low reverse transfer capacitance: C = 0.1 pF (typ.) rssMaximum Ratings (Ta == 25C) ==Characteris
0.1. Size:36K panasonic
2sk1614.pdf
Power F-MOS FETs 2SK16142SK1614Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.5 10.5 0.5 2.0 0.1VGSS, 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1 0
0.2. Size:36K panasonic
2sk1613.pdf
Power F-MOS FETs 2SK16132SK1613Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.5 10.5 0.5 2.0 0.1VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1
0.3. Size:36K panasonic
2sk1612.pdf
Power F-MOS FETs 2SK16122SK1612Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2 1.4 0.1For high-frequency power amplification+0.20.5 -0.10.8
0.4. Size:36K panasonic
2sk1611.pdf
Power F-MOS FETs 2SK16112SK1611Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator, AC adaptor) 1.3 0.2For high-frequency power amplification1.4 0.1+0.20
0.5. Size:36K panasonic
2sk1610.pdf
Power F-MOS FETs 2SK16102SK1610Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.5 10.5 0.5 2.0 0.1VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1
0.6. Size:34K hitachi
2sk1618.pdf
2SK1618(L), 2SK1618(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineLDPAK44123123DG1. Gate2. Drain3. SourceS4. Drain2SK1618(L), 2SK1618(S)Absolute Maximum Rating
0.7. Size:217K inchange semiconductor
2sk1614.pdf
isc N-Channel MOSFET Transistor 2SK1614DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
0.8. Size:214K inchange semiconductor
2sk1613.pdf
isc N-Channel MOSFET Transistor 2SK1613DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
0.9. Size:207K inchange semiconductor
2sk1612.pdf
isc N-Channel MOSFET Transistor 2SK1612DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
0.10. Size:192K inchange semiconductor
2sk1611.pdf
isc N-Channel MOSFET Transistor 2SK1611DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
0.11. Size:216K inchange semiconductor
2sk1610.pdf
isc N-Channel MOSFET Transistor 2SK1610DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
Datasheet: IRFP360LC
, IRFP3710
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, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
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, IRFP450
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