2SK1628 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1628
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 450 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 140 nS
Drain-Source Capacitance (Cd): 780 pF
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO3PL
2SK1628 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1628 Datasheet (PDF)
0.1. rej03g0960 2sk1628ds.pdf 
Size:118K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.2. 2sk1628.pdf Size:82K _renesas
2SK1628, 2SK1629 Silicon N Channel MOS FET REJ03G0960-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A(Package name: TO-3PL)DG1. Gate2. D
8.1. 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf Size:515K _1
8.2. 2sk1620.pdf Size:90K _renesas
2SK1620(L), 2SK1620(S) Silicon N Channel MOS FET REJ03G0957-0200 (Previous: ADE-208-1298) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004AE
8.3. 2sk1629-e1-e.pdf Size:268K _renesas
Preliminary Datasheet 2SK1629-E1-E R07DS1197EJ0200500V - 30A - MOS FET Rev.2.00High Speed Power Switching Mar 26, 2014Features Low on-resistance RDS(on) = 0.22 typ. (at ID = 15 A, VGS= 10 V, Ta = 25C) High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003ZC-A(Package n
8.4. rej03g0958 2sk1623lsds.pdf Size:102K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. 2sk1623.pdf Size:89K _renesas
2SK1623(L), 2SK1623(S) Silicon N Channel MOS FET REJ03G0958-0300 (Previous: ADE-208-1299) Rev.3.00 Jan 10, 2006 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Packa
8.6. 2sk1626 2sk1627.pdf Size:194K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.7. 2sk162.pdf Size:57K _nec
8.8. 2sk1623l.pdf Size:218K _inchange_semiconductor
INCHANGESemiconductorisc N-Channel MOSFET Transistor 2SK1623LFEATURESWith TO-262 packagingHigh speed switchingLow driving powerEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
8.9. 2sk1629.pdf Size:214K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1629ESCRIPTIONDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV Drain-Source Voltage (V =0) 500 VDSS GSV
Datasheet: 2SK1567 , 2SK1579 , 2SK161 , 2SK1611 , 2SK1618L , 2SK1618S , 2SK1620S , 2SK1620L , IRFB3306 , 2SK1636L , 2SK1636S , 2SK1667 , 2SK1668 , 2SK1669 , 2SK168 , 2SK1690 , 2SK1691 .
