All MOSFET. 2SK1636L Datasheet

 

2SK1636L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1636L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 85 nS

Drain-Source Capacitance (Cd): 510 pF

Maximum Drain-Source On-State Resistance (Rds): 0.22 Ohm

Package: LDPAK

2SK1636L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1636L Datasheet (PDF)

3.1. 2sk1636.pdf Size:95K _renesas

2SK1636L
2SK1636L

2SK1636(L), 2SK1636(S) Silicon N Channel MOS FET REJ03G0961-0200 (Previous: ADE-208-1304) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AE-A RENESAS Pac

4.1. 2sk1637.pdf Size:232K _renesas

2SK1636L
2SK1636L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk163.pdf Size:57K _nec

2SK1636L
2SK1636L



 4.3. 2sk1635.pdf Size:42K _panasonic

2SK1636L



4.4. 2sk1637 2sk2422.pdf Size:34K _hitachi

2SK1636L
2SK1636L

2SK1637, 2SK2422 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SK1637, 2SK2422 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating

 4.5. 2sk1630.pdf Size:212K _inchange_semiconductor

2SK1636L
2SK1636L

isc N-Channel MOSFET Transistor 2SK1630 DESCRIPTION ·Drain Current –I = 3A@ T =25℃ D C ·Drain Source Voltage- : V =700V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

4.6. 2sk1633.pdf Size:207K _inchange_semiconductor

2SK1636L
2SK1636L

isc N-Channel MOSFET Transistor 2SK1633 DESCRIPTION ·Drain Current –I = 5A@ T =25℃ D C ·Drain Source Voltage- : V =700V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

4.7. 2sk1639.pdf Size:213K _inchange_semiconductor

2SK1636L
2SK1636L

isc N-Channel MOSFET Transistor 2SK1639 DESCRIPTION ·Drain Current –I = 4A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

4.8. 2sk1635.pdf Size:214K _inchange_semiconductor

2SK1636L
2SK1636L

isc N-Channel MOSFET Transistor 2SK1635 DESCRIPTION ·Drain Current –I = 50A@ T =25℃ D C ·Drain Source Voltage- : V =60V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current, ·low voltage ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 60 V DSS GS V Gate-Sour

4.9. 2sk1631.pdf Size:207K _inchange_semiconductor

2SK1636L
2SK1636L

isc N-Channel MOSFET Transistor 2SK1631 DESCRIPTION ·Drain Current –I = 3A@ T =25℃ D C ·Drain Source Voltage- : V =700V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

4.10. 2sk1638.pdf Size:213K _inchange_semiconductor

2SK1636L
2SK1636L

isc N-Channel MOSFET Transistor 2SK1638 DESCRIPTION ·Drain Current –I = 3A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

4.11. 2sk1632.pdf Size:212K _inchange_semiconductor

2SK1636L
2SK1636L

isc N-Channel MOSFET Transistor 2SK1632 DESCRIPTION ·Drain Current –I = 5A@ T =25℃ D C ·Drain Source Voltage- : V =700V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

4.12. 2sk1634.pdf Size:216K _inchange_semiconductor

2SK1636L
2SK1636L

isc N-Channel MOSFET Transistor 2SK1634 DESCRIPTION ·Drain Current –I = 5A@ T =25℃ D C ·Drain Source Voltage- : V =700V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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