2SK192A
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK192A
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.2
W
|Vgs|ⓘ - Maximum Gate-Source Voltage: 3
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 0.024
A
Tjⓘ - Maximum Junction Temperature: 125
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 142
Ohm
Package: 2-4E1D
2SK192A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK192A
Datasheet (PDF)
..1. Size:362K toshiba
2sk192a.pdf 
2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications Unit: mm VHF Band Amplifier Applications High power gain: GPS = 24dB (typ.) (f = 100 MHz) Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta == 25C) ==Characteristics Sy
8.2. Size:114K sanyo
2sk1924.pdf
Ordering number:EN4313N-Channel Silicon MOSFET2SK1924Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C High-speed diode (trr=140ns).[2SK1924]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Ratings
8.3. Size:93K sanyo
2sk1920.pdf
Ordering number:EN4244AN-Channel Silicon MOSFET2SK1920Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK1920]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1920]6.5 2.35.0 0.540.5
8.4. Size:109K sanyo
2sk1922.pdf
Ordering number:EN4311N-Channel Silicon MOSFET2SK1922Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C High-speed diode (trr=100ns).[2SK1922]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Ratings
8.5. Size:89K sanyo
2sk1921.pdf
Ordering number:EN4310N-Channel Silicon MOSFET2SK1921Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C Low-voltage drive.[2SK1921]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Ratings at Ta = 25
8.6. Size:113K sanyo
2sk1923.pdf
Ordering number:EN4312N-Channel Silicon MOSFET2SK1923Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C High-speed diode (trr=120ns).[2SK1923]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Ratings
8.7. Size:115K sanyo
2sk1925.pdf
Ordering number:ENN4314N-Channel Silicon MOSFET2SK1925Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2056A High-speed diode (trr=150ns).[2SK1925]15.63.24.814.02.01.62.00.61.01 2 31 : Gate0.62 : Drain3 : Source5.45 5.45 SANYO : TO-3PBSpecificationsAbsolute Maximum
8.9. Size:214K inchange semiconductor
2sk1924.pdf
isc N-Channel MOSFET Transistor 2SK1924DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 600 V
8.10. Size:216K inchange semiconductor
2sk1922.pdf
isc N-Channel MOSFET Transistor 2SK1922DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0)
8.11. Size:214K inchange semiconductor
2sk1923.pdf
isc N-Channel MOSFET Transistor 2SK1923DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChopper regulator and motor driveABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0
8.12. Size:217K inchange semiconductor
2sk1925.pdf
isc N-Channel MOSFET Transistor 2SK1925DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 600
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