2SK2095N Datasheet and Replacement
Type Designator: 2SK2095N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO220FN
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2SK2095N Datasheet (PDF)
2sk2095n.pdf

TransistorsSmall switching (60V, 10A)2SK2095NFFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Easily designed drive circuits.5) Low VGS(th).6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications94Transistors 2SK2095NFElectric
2sk2090.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2090N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGThe 2SK2090 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm)it can be driven by a voltage as low as 2.5 V and it is not2.1 0.1necessary to consider a drive current, this FET is ideal as an1.25 0.1actuator for low-current portable systems such as headphonestereos and
2sk209.pdf

2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit: mm High |Yfs|: |Y | = 15 mS (typ.) at V = 10 V, V = 0 fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = -1 nA (max) at V
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IRF6724MPBF | SVGP20110NSTR | 2SJ313 | MXP4004AT | RQJ0306FQDQS | SM7003NSFH | MEE42942-G
Keywords - 2SK2095N MOSFET datasheet
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History: IRF6724MPBF | SVGP20110NSTR | 2SJ313 | MXP4004AT | RQJ0306FQDQS | SM7003NSFH | MEE42942-G



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