2SK2095N Specs and Replacement
Type Designator: 2SK2095N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO220FN
2SK2095N substitution
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2SK2095N datasheet
2sk2095n.pdf
Transistors Small switching (60V, 10A) 2SK2095N FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Easily designed drive circuits. 5) Low VGS(th). 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 94 Transistors 2SK2095N FElectric... See More ⇒
2sk2090.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2090 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm) it can be driven by a voltage as low as 2.5 V and it is not 2.1 0.1 necessary to consider a drive current, this FET is ideal as an 1.25 0.1 actuator for low-current portable systems such as headphone stereos and ... See More ⇒
2sk209.pdf
2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit mm High Yfs Y = 15 mS (typ.) at V = 10 V, V = 0 fs DS GS High breakdown voltage V = -50 V GDS Low noise NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance I = -1 nA (max) at V... See More ⇒
Detailed specifications: 2SK2008, 2SK2038, 2SK2039, 2SK2061, 2SK2062, 2SK2063, 2SK2064, 2SK2094, SI2302, 2SK2114, 2SK2115, 2SK212, 2SK2161, 2SK2223-01R, 2SK223, 2SK2237, 2SK2280
Keywords - 2SK2095N MOSFET specs
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History: SMG2339P
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