2SK212 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK212
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vgs|ⓘ - Maximum Gate-Source Voltage: 2.5 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.02 A
Tjⓘ - Maximum Junction Temperature: 125 °C
Cossⓘ - Output Capacitance: 4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
Package: SPA
2SK212 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK212 Datasheet (PDF)
2sk212.pdf
Ordering number:EN661EN-Channel Junction Silicon FET2SK212FM Tuner ApplicationsFeatures Package Dimensions Ideal for FM tuners in low-voltage radios, car radios,unit:mmetc.2040A Small-sized package permitting 2SK212-applied sets[2SK212]to be made small and slim.2.24.0 Small Crss (Crss=0.04pF typ). High yfs ( yfs =6.0mS typ).0.40.50.4
2sk2128.pdf
Power F-MOS FETs 2SK21282SK2128Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS >15mJ4.6 0.29.9 0.3 2.9 0.2VGSS=20V guaranteed3.2 0.1High-speed switching : tf= 35nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive
2sk2123.pdf
Power F-MOS FETs 2SK21232SK2123Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 100mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 35nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor driv
2sk2126.pdf
Power F-MOS FETs 2SK21262SK2126Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 100mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 40nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor driv
2sk2127.pdf
Power F-MOS FETs 2SK21272SK2127Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 130mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 60nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor driv
2sk2122.pdf
Power F-MOS FETs 2SK21222SK2122Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 3.2mJ4.6 0.29.9 0.3 2.9 0.2High-speed switching : tf= 50ns3.2 0.1No secondary breakdown Applications2.6 0.1Non-contact relay1.2 0.151.45 0.15 0.7 0.1Solenoid drive0.75 0.1Motor drive2.54 0.2Control equipment5
2sk2129.pdf
Power F-MOS FETs 2SK21292SK2129Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 20mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 50nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive
2sk2124.pdf
Power F-MOS FETs 2SK21242SK2124Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 130mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 60nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor driv
2sk2125.pdf
Power F-MOS FETs 2SK21252SK2125Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15.6mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 35nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor dri
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2SK2051-S
History: 2SK2051-S
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