2SK2422
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2422
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8
Ohm
Package:
TO220FM
2SK2422
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2422
Datasheet (PDF)
..1. Size:34K hitachi
2sk1637 2sk2422.pdf 
2SK1637, 2SK2422Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineTO-220FMD1231. GateG2. Drain3. SourceS2SK1637, 2SK2422Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating
8.1. Size:170K sanyo
2sk242.pdf
Ordering number:EN695GN-Channel Junction Silicon FET2SK242Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Ultrasmall-sized package permitting 2SK242-appliedunit:mmsets to be made small and slim.2024B Small Crss (Crss=0.04pF typ).[2SK242]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Drain3 : SourceSANYO : CPSpec
8.2. Size:13K hitachi
2sk2424.pdf
2SK2424Silicon N Channel MOS FETApplicationTO220CFMHigh speed power switchingFeatures Low onresistance High speed switching2 Low drive current1 No Secondary Breakdown231 Suitable for Switching regulator, DC DC converter1. Gate2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
8.3. Size:28K hitachi
2sk2425.pdf
2SK2425Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2425Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so
8.4. Size:28K hitachi
2sk2423.pdf
2SK2423Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2423Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so
8.5. Size:28K hitachi
2sk2426.pdf
2SK2426Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2426Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so
8.6. Size:33K no
2sk2421.pdf
2SK2421External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 100A, V = 0VDSS (BR) DSS D GSV 20 V I 100 nA V = 20VGSS GSS GSI 40 A I 100 A V = 60V, V = 0VD DSS DS GSI 160 A V 2.0 4.0 V V = 10V, I = 1mAD (pulse) TH DS D
8.7. Size:34K no
2sk2420.pdf
2SK2420External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 100A, V = 0VDSS (BR) DSS D GSV 20 V I 100 nA V = 20VGSS GSS GSI 30 A I 100 A V = 60V, V = 0VD DSS DS GSI 120 A V 2.0 4.0 V V = 10V, I = 250AD (pulse) TH DS
8.8. Size:42K sanken-ele
2sk2420.pdf
2SK2420External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 100A, V = 0VDSS (BR) DSS D GSV 20 V I 100 nA V = 20VGSS GSS GSI 30 A I 100 A V = 60V, V = 0VD DSS DS GSI 120 A V 2.0 4.0 V V = 10V, I = 250AD (pulse) TH DS
8.9. Size:190K inchange semiconductor
2sk2424.pdf
isc N-Channel MOSFET Transistor 2SK2424DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr
8.10. Size:252K inchange semiconductor
2sk2420.pdf
isc N-Channel MOSFET Transistor 2SK2420FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
8.11. Size:213K inchange semiconductor
2sk2425.pdf
isc N-Channel MOSFET Transistor 2SK2425DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr
8.12. Size:213K inchange semiconductor
2sk2423.pdf
isc N-Channel MOSFET Transistor 2SK2423DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr
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