BF256B Datasheet and Replacement
Type Designator: BF256B
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.013 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
Package: TO92
BF256B substitution
BF256B Datasheet (PDF)
bf256a bf256b bf256c.pdf

BF256A/BF256B/BF256CN-Channel RF Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 10 mAPD Total Device Dissipation @TA=25C 350 mWDer
bf256a-d.pdf

BF256ABF256A is a Preferred DeviceJFET - General PurposeNChannelNChannel Junction Field Effect Transistor designed for VHF andUHF applications.http://onsemi.com Low Cost TO92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos (Min) 1 DRAIN Transfer Capacitance Crss = 0.7 (Typ) Power Gain at f = 800 MHz, Typ. = 11 dB3GATEMAXIMUM RATINGS
Datasheet: 2SK2395 , 2SK2397-01MR , 2SK241 , 2SK2422 , 2SK2423 , 2SK2424 , 2SK2425 , BF256A , IRFZ48N , BF256C , 2SK2426 , 2SK2431 , 2SK2445 , 2SK247 , 2SK301 , 2SK316 , 2SK2489 .
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