AP01L60J-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP01L60J-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 29
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 30.7
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 12
Ohm
Package:
TO251
AP01L60J-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP01L60J-HF
Datasheet (PDF)
4.1. Size:62K ape
ap01l60h-h ap01l60j-h.pdf
AP01L60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1AGSDescriptionThe TO-252 package is universally preferred for all commercial-industrialGsurface mount applications and suited for AC/DC converters. The DSTO
5.1. Size:62K ape
ap01l60h-a-hf ap01l60j-a-hf.pdf
AP01L60H/J-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 650VD Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for commercial-industrialGsurface mount applications and suited for AC/
6.1. Size:202K ape
ap01l60j.pdf
AP01L60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 1AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for commercial-industrialGsurface mount applications and suited
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