AP01N40J-HF Specs and Replacement
Type Designator: AP01N40J-HF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 17.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 11 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm
Package: TO251
AP01N40J-HF substitution
- MOSFET ⓘ Cross-Reference Search
AP01N40J-HF datasheet
ap01n40j.pdf
AP01N40J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400V D 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5A G Simple Drive Requirement S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig... See More ⇒
ap01n40g-hf.pdf
AP01N40G-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400V D 100% Avalanche Test RDS(ON) 16 Fast Switching Performance ID 0.2A G Simple Drive Requirement S D Description Advanced Power MOSFETs from APEC provide the designer with S the best combination of fast switching, ruggedized device... See More ⇒
ap01n40hj-hf.pdf
AP01N40H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400V D 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5A G Simple Drive Requirement S RoHS Compliant & Halogen-Free Description G D AP01N40 series are from Advanced Power innovated design and TO-252(H) S sili... See More ⇒
Detailed specifications: AP0103GP-HF, AP01L60AT, AP01L60H-HF, AP01L60J-HF, AP01L60T, AP01L60T-H-HF, AP01N15GK-HF, AP01N40G-HF, IRF3710, AP01N40H-HF, AP01N60H-HF, AP01N60J-HF, 2SK2740, 2SK2791, 2SK2792, 2SK2793, 2SK2795
Keywords - AP01N40J-HF MOSFET specs
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