AP01N40H-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP01N40H-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 17.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 0.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 11
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 16
Ohm
Package:
TO252
AP01N40H-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP01N40H-HF
Datasheet (PDF)
6.1. Size:57K ape
ap01n40hj-hf.pdf
AP01N40H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5AG Simple Drive RequirementS RoHS Compliant & Halogen-FreeDescriptionGDAP01N40 series are from Advanced Power innovated design andTO-252(H)Ssili
7.1. Size:56K ape
ap01n40g-hf.pdf
AP01N40G-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Test RDS(ON) 16 Fast Switching Performance ID 0.2AG Simple Drive RequirementSDDescriptionAdvanced Power MOSFETs from APEC provide the designer withSthe best combination of fast switching, ruggedized device
7.2. Size:65K ape
ap01n40j.pdf
AP01N40JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5AG Simple Drive RequirementSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desig
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