2SK2740 Specs and Replacement
Type Designator: 2SK2740
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220FN
2SK2740 substitution
- MOSFET ⓘ Cross-Reference Search
2SK2740 datasheet
2sk2740.pdf
Transistors Switching (600V, 7A) 2SK2740 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 15... See More ⇒
2sk2741.pdf
2SK2741 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2741 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.12 (typ.) DS (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem... See More ⇒
2sk2742.pdf
2SK2742 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2742 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.28 (typ.) DS (ON) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance... See More ⇒
Detailed specifications: AP01L60T, AP01L60T-H-HF, AP01N15GK-HF, AP01N40G-HF, AP01N40J-HF, AP01N40H-HF, AP01N60H-HF, AP01N60J-HF, 2N7000, 2SK2791, 2SK2792, 2SK2793, 2SK2795, 2SK2845, 2SK2854, 2SK2855, 2SK2881
Keywords - 2SK2740 MOSFET specs
2SK2740 cross reference
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