2SK2887 PDF and Equivalents Search

 ..1. Size:135K  rohm
 2sk2887 1-5.pdf

... See More ⇒

 ..2. Size:139K  rohm
 2sk2887.pdf

Transistors Switching (200V, 3A) 2SK2887 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 16... See More ⇒

 ..3. Size:286K  inchange semiconductor
 2sk2887.pdf

isc N-Channel MOSFET Transistor 2SK2887 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.1. Size:417K  toshiba
 2sk2889.pdf

2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2889 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Y = 9.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode Vth = 2.0 4.0 V... See More ⇒

 8.2. Size:430K  toshiba
 2sk2883.pdf

2SK2883 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2883 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Y = 2.6 S (typ.) fs Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4... See More ⇒

 8.3. Size:423K  toshiba
 2sk2886.pdf

2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2886 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 14 m (typ.) (ON) High forward transfer admittance Y = 31 S (typ.) fs Low leakage current I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode Vth = 0.8 2.0 V (V... See More ⇒

 8.4. Size:318K  toshiba
 2sk2882.pdf

... See More ⇒

 8.5. Size:427K  toshiba
 2sk2884.pdf

2SK2884 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2884 Chopper Regulator, DC-DC Converter Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.9 (typ.) High forward transfer admittance Y = 3.8 S (typ.) fs Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = ... See More ⇒

 8.6. Size:34K  hitachi
 2sk2885l-s.pdf

2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features Low on-resistance RDS(on) = 10m typ. 4V gate drive devices. High speed switching Outline LDPAK 4 4 D 1 2 3 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Dr... See More ⇒

 8.7. Size:38K  hitachi
 2sk2885.pdf

2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features Low on-resistance RDS(on) = 10m typ. 4V gate drive devices. High speed switching Outline LDPAK 4 4 D 1 2 3 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Dr... See More ⇒

 8.8. Size:114K  isahaya
 2sk2880.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒

 8.9. Size:103K  isahaya
 2sk2881.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is alw... See More ⇒

 8.10. Size:282K  inchange semiconductor
 2sk2885l.pdf

isc N-Channel MOSFET Transistor 2SK2885L FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 8.11. Size:356K  inchange semiconductor
 2sk2889b.pdf

isc N-Channel MOSFET Transistor 2SK2889B FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.12. Size:234K  inchange semiconductor
 2sk2886.pdf

isc N-Channel MOSFET Transistor 2SK2886 DESCRIPTION Drain Current I = 45A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL VALU... See More ⇒

 8.13. Size:357K  inchange semiconductor
 2sk2884b.pdf

isc N-Channel MOSFET Transistor 2SK2884B FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.14. Size:356K  inchange semiconductor
 2sk2885s.pdf

isc N-Channel MOSFET Transistor 2SK2885S FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 8.15. Size:282K  inchange semiconductor
 2sk2889k.pdf

isc N-Channel MOSFET Transistor 2SK2889K FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.16. Size:283K  inchange semiconductor
 2sk2884k.pdf

isc N-Channel MOSFET Transistor 2SK2884K FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.17. Size:283K  inchange semiconductor
 2sk2883k.pdf

isc N-Channel MOSFET Transistor 2SK2883K FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 3.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.18. Size:357K  inchange semiconductor
 2sk2883b.pdf

isc N-Channel MOSFET Transistor 2SK2883B FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 3.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.19. Size:279K  inchange semiconductor
 2sk2882.pdf

isc N-Channel MOSFET Transistor 2SK2882 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 0.12 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒